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      Articles written in Bulletin of Materials Science

    • Volume 39 Issue 1 February 2016 pp 293-298

      Low-temperature localization in the transport properties of self-doped La$_{0.9}$Mn$_{0.98}$Zn$_{0.02}$O$_3$

      K De S Das

      More Details Abstract Fulltext PDF

      Low-temperature transport properties are investigated in the self-doped compound, La$_{0.9}$Mn$_{0.98}$Zn$_{0.02}$O$_3$. The analysis of the low-temperature resistivity is performed considering various scattering mechanisms. The parameters involved with different scattering processes such as electron–electron, Kondo, electron–phonon and electron–magnon are found to be strongly influenced by the applied magnetic field. The results suggest that interplay between electron–electron and Kondo-like scatterings lead to the localization in the temperature dependence of resistivity at low temperature.

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