Articles written in Bulletin of Materials Science
Volume 27 Issue 4 August 2004 pp 333-336 Crystal Growth
Nd3+ : Sr3Ga2Ge4O14 crystals have been grown by the modified Bridgman method. The growth defects, such as striations, scattering particles and dislocations were investigated. Some featherlike striations were observed in as-grown crystals. EPMA analysis suggested that these inclusions were caused by the segregation of Nd2O3 from the melt. Chemical etching results showed that the dislocation density was in the range of 103 ∼ 105/cm2.
Volume 28 Issue 6 October 2005 pp 561-564 Single Crystals
The photorefractive crystal, Bi2TeO5, was grown by the modified Bridgman method for the first time. High purity Bi2O3 and TeO2 were used as starting materials and were mixed thoroughly with molar ratio of Bi2O3/TeO2 = 1 : 1. Platinum crucible was fabricated with a seed well of 10 mm in diameter and several folds were pressed so that the spontaneous nuclei could be eliminated through competition. The crucible was sealed during the growth so that the evaporation of TeO2 was controlled effectively. By optimizing growth parameters, transparent and crack-free Bi2TeO5 crystal up to 25 mm in diameter and 40 mm in length was grown successfully.
Volume 30 Issue 2 April 2007 pp 101-104 Single Crystals
A new piezoelectric single crystal, Sr3Ga2Ge4O14 (SGG), has been grown successfully by the vertical Bridgman method with crucible-sealing technique. SGG crystal up to 2″ in diameter has been obtained. The relative dielectric constants, the piezoelectric strain constants, elastic compliance constants and electromechanical coupling factors have been determined with resonance and anti-resonance frequencies method by using the impedance analyzer (Agilent 4294A). The results show that the piezoelectric strain constants and electromechanical coupling factors of SGG single crystal are higher than those of LGS single crystals making it a potential substrate material for surface-acoustic wave applications.
Volume 42 | Issue 5
Click here for Editorial Note on CAP Mode