• J P Banerjee

      Articles written in Bulletin of Materials Science

    • Properties of gallium arsenide and indium phosphide impatts at microwave and millimetre-wave frequencies

      S K Roy J P Banerjee

      More Details Abstract Fulltext PDF

      The static and high frequency properties of GaAs and InP impatts have been investigated for lower microwave and higher millimetre-wave frequencies using the computer simulation programmes developed by the authors. The profiles of negative resistance and reactance in the depletion layer of SDR and DDR devices based on GaAs and InP and their admittance properties have been investigated. The results indicate that InP impatts of the SDR and DDR varieties have higher drift zone voltage, higher negative resistance and higher negative conductance as compared to their GaAs counterparts, both in the microwave frequency and in the millimetre-wave frequency ranges. It is thus observed that higher radio-frequency power can be obtained from InP devices than from GaAs devices.

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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