Articles written in Bulletin of Materials Science
Volume 13 Issue 3 June 1990 pp 165-171
The authors examine the boric oxide—ammonia route with special stress on the yield and composition of the intermediate addition compound (BN)
Volume 13 Issue 3 June 1990 pp 173-178
Silicon nitride-silicon carbide (Si3N4-SiC) composites were prepared by varying the percentage of silicon nitride at temperatures of 1350 to 1450°C. The mechanical and thermal properties of these composites were determined. The modulus of rupture of the composites increases with increase of temperature whereas the thermal expansion decreases. Composites with 10% and 50% Si3N4 have modulus of rupture of 49 and 86 MPa at 1400°C and thermal expansion coefficients (25°–1000°C) of 4·4 × 10−6 and 3·2 × 10−6°C−1 respectively.
Volume 13 Issue 4 September 1990 pp 259-270
Fabrication of silicon preforms of high green density (>1·2 g/cm3) by slip casting of silicon (in aqueous medium) has been studied. The nitridation product consists of 59–85% α-Si3N4, 7–22%
Pore size distribution, existence of Si2N2O phase and oxidation of RBSN at high temperatures have been considered for the explanation of the observed behaviour.
Volume 16 Issue 4 August 1993 pp 325-329
The oxidation kinetics of reaction-sintered silicon carbide has been studied over the temperature range 1200° to 1350°C. The material has a bulk density of 3·00 g/cm3 and the unreacted Si content is 22·5% (v/v). The activation energy for oxidation is 28·75 ± 2·61 kcal/mol. It is proposed that the diffusion of oxygen through the growing oxide film is the rate-controlling process.
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