• J Goswami

      Articles written in Bulletin of Materials Science

    • Nucleation and growth study of copper thin films on different substrates and wetting layers by metal-organic chemical vapour deposition

      A Dutta J Goswami S A Shivashankar

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      Chemical vapour deposition of copper thin films on different diffusion barrier/adhesion promoter layers have been studied. Copper thin films were grown in low pressure CVD reactor, using Cu(dpm)2 as precursor and argon as carrier gas. Growth rates, film adhesion to the substrate, and surface morphology were studied in detail.

    • Monte Carlo simulation of nucleation and growth of thin films

      J Goswami G Ananthakrishna S A Shivashankar

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      We study thin film growth using a lattice-gas, solid-on-solid model employing the Monte Carlo technique. The model is applied to chemical vapour deposition (CVD) by including the rate of arrival of the precursor molecules and their dissociation. We include several types of migration energies including the edge migration energy which allows the diffusive movement of the monomer along the interface of the growing film, as well as a migration energy which allows for motion transverse to the interface. Several well-known features of thin film growth are mimicked by this model, including some features of thin copper films growth by CVD. Other features reproduced are—compact clusters, fractal-like clusters, Frank-van der Merwe layer-by-layer growth and Volmer-Weber island growth. This method is applicable to film growth both by CVD and by physical vapour deposition (PVD).

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