J D Kshatriya
Articles written in Bulletin of Materials Science
Volume 6 Issue 3 July 1984 pp 549-567
Besides interesting properties such as optical, transport, structure, etc. possessed by crystals of transition metal dichalcogenides, they have also been found to have a potential application in the fabrication of
The crystals thus grown have been characterized structurally using the techniques of x-ray powder, rotation and Weissenberg photographs and electron diffraction. Perfection studies have been made by techniques like chemical etching and electron microscopy.
This review describes the electron microscopic studies made on the single crystals of the layered compounds. High resolution technique of weak beam has been employed to study dislocation pattern. Dissociated dislocations have been used to estimate stacking fault energy. Such measurements have also been carried out at different temperatures and the variation of stacking fault energy with temperature has been worked out. Interesting information regarding phase transformation for TaS2 and W3Se4 in the temperature range 109 to 580 K has been derived from the electron diffraction studies and the implications have been discussed.
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