Articles written in Bulletin of Materials Science

    • Effect of CuIn$_{1-x}$Al$_x$Se$_2$ (CIAS) thin film thickness and diode annealing temperature on Al/p-CIAS Schottky diode


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      Al/p-CIAS Schottky diodes were fabricated by depositing aluminium (Al) on different flash evaporated copper–indium–aluminium–diselenide (CIAS) films of varying thickness. Further, all diodes were annealed at 573 K for an hour. The influence of p-CIAS film thickness and the thermal annealing of Al/p-CIAS Schottky diode were investigated by observing current–voltage ($I–V$) and capacitance–voltage ($C–V$) characteristics at room temperature. Various diodeparameters, such as ideality factor ($\eta$), barrier height ($\phi_{\rm bo}$) and series resistance ($R_{\rm s}$) were calculated using Cheung’s and Norde methods. $\phi_{\rm bo}$ found to increase with annealing as well as with increase in the film thickness. However, the value of $\eta$ and $R_{\rm s}$ decreases with annealing and CIAS thickness. The effective density of states ($N_{\rm v}$), acceptor density of states ($N_{\rm A}$) and barrier height have been calculated from $C–V$ measurements. Values obtained from CV analysis were well matched with $I–V$ results. The value of $N_{\rm v}$ decreases and the value of $N_{\rm A}$ increases with the increase in the film thickness. Using $I–V$ and $C–V$ parameters, energy band gap for the prepared Al/p-CIAS diodes has been reconstructed.

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