• J Kumar

      Articles written in Bulletin of Materials Science

    • Progress in III–nitrides: Process issue and purity perspective

      J Kumar

      More Details Abstract Fulltext PDF

      The growth of good quality layers of gallium nitride (GaN) as suitable for epitaxial growth is of great technological importance. Chloride vapour phase epitaxy (Cl–VPE) has been employed to grow good quality layers of GaN. The grown layers have been extensively characterized for their structural and optical properties. MOVPE grown GaN layers have been used to address process issues on device structuring and fabrication. GaN samples with different transition metal dopants have been synthesized and their usefulness as semi-magnetic materials, which are also identified as dilute magnetic semiconductors (DMS), have been evaluated. Better results have been obtained on the magnetic characteristics of GaN with ruthenium as the dopant. Nano dimensional structures of GaN have been obtained with excellent control of the growth parameters.

    • Morphology, surface topography and optical studies on electron beam evaporated MgO thin films

      A Chowdhury J Kumar

      More Details Abstract Fulltext PDF

      Electron beam evaporated thin films of MgO powder synthesized by burning of magnesium ribbon in air and sol–gel technique are studied for their microstructure (SEM), surface topography (AFM), and optical transmission behaviour (UV-visible spectroscopy). MgO thin films are shown to be either continuous or have mesh like morphology. The bar regions are believed to be of magnesium hydroxide formed due to absorption of moisture. Their AFM images exhibit columnar/pyramidal/truncated cone structure, providing support to the 3D Stranski–Krastanov model for film growth. Further, they are shown to have high transmittance (∼90%) in the wavelength range 400–600 nm, but absorb radiation below 350 nm substantially giving signature of a band transition.

  • Bulletin of Materials Science | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.