J K Radhakrishnan
Articles written in Bulletin of Materials Science
Volume 24 Issue 6 December 2001 pp 659-663 Single Crystals
One of the most pressing issues in the growth of high quality single crystal Cd0.96Zn0.04Te material, is to achieve homogenization of the high axial variation of Zn concentration, caused by the larger than unity segregation coefficient of Zn in CdTe. This is achieved in our crystals
by thermal annealing of the CdZnTe crystal, which redistributes the as grown Zn distribution by solid state diffusion of Zn (this solid state diffusion of Zn occurs at three stages during the growth when the solidified crystal is near to the melting point temperature, during the post growth annealing of the crystal at a high temperature and during the cooldown to room temperature) and
during the growth when the solidified crystal is near to the melting point temperature,
during the post growth annealing of the crystal at a high temperature and
during the cooldown to room temperature) and
by the reduction of Zn segregation during the growth stage by enhanced convective mixing of the melt, through a proper choice of ampoule and furnace dimensions.
By adopting suitable growth parameters and sufficient post growth annealing it has been possible to grow Cd0.96Zn0.04Te crystals, which have nearly 75% of their fraction within 1% Zn concentration variation.
Volume 25 Issue 6 November 2002 pp 483-486
The characteristics of HgCdTe epilayers grown in a modified horizontal slider system, are reported here. The surface morphology of the grown layers, their IR transmission characteristics, depth and lateral compositional uniformity, structural and electrical characteristics are discussed.
Volume 28 Issue 2 April 2005 pp 97-102 Semiconductors
Growth of Hg1–𝑥Cd𝑥Te epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have been successfully solved. The epitaxial films have been electrically characterized by using the Hall effect and capacitance–voltage (𝐶–𝑉) measurements.
Volume 42 | Issue 6
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