• Harsh

      Articles written in Bulletin of Materials Science

    • Raman study on single-walled carbon nanotubes with different laser excitation energies

      S S Islam Khurshed Ahmad Shah H S Mavi A K Shaukla S Rath Harsh

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      The industrial use of carbon nanotubes is increasing day by day; therefore, it is very important to identify the nature of carbon nanotubes in a bundle. In this study, we have used the Raman spectroscopic analysis on vertically aligned single-walled carbon nanotubes (SWCNTs) grown by the chemical vapour deposition (CVD) technique. The grown sample is excited with two laser excitation wavelengths, 633 nm from He–Ne laser and 514.5 nm from Ar+ laser. Raman spectrum in the backscattering geometry provides the characteristic spectra of SWCNTs with its radial breathing mode (RBM), defect-induced disorder mode (D band), and highenergy modes (G and M bands). The Raman signal positions of the spectra in RBM, G and M bands confirm the grown sample to be of semiconducting type in nature.

    • Wavelength dependent laser-induced etching of Cr–O doped GaAs: Morphology studies by SEM and AFM

      B Joshi S S Islam H S Mavi Vinita Kumari T Islam A K Shukla Harsh

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      The laser induced etching of semi-insulating GaAs $\langle$100$\rangle$ is carried out to create porous structure under super- and sub-bandgap photon illumination (ℎν). The etching mechanism is different for these separate illuminations where defect states play the key role in making distinction between these two processes. Separate models are proposed for both the cases to explain the etching efficiency. It is observed that under sub-bandgap photon illumination the etching process starts vigorously through the mediation of intermediate defect states. The defect states initiate the pits formation and subsequently pore propagation occurs due to asymmetric electric field in the pore. Formation of GaAs nanostructures is observed using scanning electron (SEM) and atomic force microscopy (AFM).

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