Epitaxial layers of silicon are grown on single crystal Si-substrate from a solution of silicon in indium using conventional graphite slider boat technique. The important problems of natural convection due to lower density of silicon compared to indium, poor wetting of substrate due to high angle of contact of indium solution on silicon substrate resulting in poor nucleation, melt removal from the growth substrate and saturation wafer associated with LPE in this technique are practically eliminated using sandwich method with simple modifications of the boat and the method of growth. Some experimental studies on the effect of different surface preparations of growth substrate are also reported. Growth results are shown and discussed. Further, improvization of slider boat to facilitate better study of growth parameters is suggested in the line of modification already carried out.

Nano porous silicon (PS) was formed on 𝑝-type monocrystalline silicon of 2–5 𝛺 cm resistivity and (100) orientation by electrochemical anodization method using HF and ethanol as the electrolytes. High density of surface states, arising due to its nano structure, is responsible for the uncontrolled oxidation in air and for the deterioration of the PS surface with time. To stabilize the material PS surface was modified by a simple and low cost chemical method using PdCl₂ solution at room temperature. X-ray photoelectron spectroscopy (XPS) was performed to reveal the chemical composition and the relative concentration of palladium on the nanoporous silicon thin films. An increase of SiO₂ formation was observed after PdCl₂ treatment and presence of palladium was also detected on the modified surface. 𝐼–𝑉 characteristics of Al/PS junction were studied using two lateral Al contacts and a linear relationship was obtained for Pd modified PS surface. Stability of the contact was studied for a time period of around 30 days and no significant ageing effect could be observed.