Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.

The rapid crystallization of KH₂PO₄ (KDP) from solution is demonstrated at a rate up to ≈7.5 mm/day along [100] and 22 mm/day along [001] in a crystallizer of 5 l capacity, using accelerated crucible rotation technique (ACRT) and simulated platform geometry for controlling the hydrodynamic conditions. On an experimental basis we have grown the crystals up to 40 × 43 × 66 mm³ size in about 3 days. Comparative analysis of the main structural and optical properties of crystals grown by conventional and rapid crystallization technique, is discussed.

Unintentionally doped homoepitaxial InSb films have been grown by liquid phase epitaxy employing ramp cooling and step cooling growth modes. The effect of growth temperature, degree of supercooling and growth duration on the surface morphology and crystallinity were investigated. The major surface features of the grown film like terracing, inclusions, meniscus lines, etc are presented step-by-step and a variety of methods devised to overcome such undesirable features are described in sufficient detail. The optimization of growth parameters have led to the growth of smooth and continuous films. From the detailed morphological, X-ray diffraction, scanning electron microscopic and Raman studies, a correlation between the surface morphology and crystallinity has been established.