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G Parthasarathy
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Volume 6 Issue 2 May 1984 pp 231-242 Electrical Properties And Electrochemistry
Electronic conduction in bulk Se1−
x Tex glasses at high pressures and at low temperaturesThe electrical resistivity of bulk Se1−
x Tex glasses is reported as a function of pressure (up to 8 GPa) and temperature (down to 77K). The activation energy for electronic conduction has been calculated at different pressures. The samples with 0⩽x ⩽0·06 show a single activation energy throughout the temperature range of investigations. On the other hand samples with 0·08⩽x ⩽0·3 show two activation energies in the different regions of temperature. The observed behaviour has been explained on the basis of band picture of amorphous semiconductors. -
Volume 7 Issue 3-4 October 1985 pp 271-302
Effect of high pressure on chalcogenide glasses
The effect of high pressures on the various properties of the chalcogenide glasses is reviewed. The properties discussed include the mechanical, electrical, optical and magnetic properties. The phenomena of the crystallization of the chalcogenide glasses under high pressure is also discussed.
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Volume 7 Issue 5 December 1985 pp 423-426
KL Bhatia G Parthasarathy ESR Gopal
The technique of high pressure is utilized to study the carrier transport behaviour in doped and undoped bulk amorphous (GeSe3·5)100−
x Bix (x =0, 2, 4, 10) down to liquid nitrogen temperature to observe impurity induced modifications in amorphous semiconductors. It is observed that pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x =4, 10) semiconductors are markedly different. Results are discussed in view of the incorporation behaviour of the bismuth impurity.
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Bulletin of Materials Science
Volume 46, 2023
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
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