G P Sanghi
Articles written in Bulletin of Materials Science
Volume 9 Issue 4 November 1987 pp 295-303
Favourable conditions for the growth of good quality silicon carbide (SiC) whiskers from rice husk have been discussed in the light of available evidence on the probable growth mechanism and the theoretical understanding of the same. Preliminary results indicate an increase in whisker yield at lower temperatures and coarsening of whiskers with longer duration of conversion.
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