• Erfeng Shen

      Articles written in Bulletin of Materials Science

    • Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO2 thin films

      Ying Li Gaoyang Zhao Jian Su Erfeng Shen Yang Ren

      More Details Abstract Fulltext PDF

      We have fabricated ZrO2 thin films by sol–gel deposition and annealed them at 300, 500 and 700 °C. Reproducible 𝐼-𝑉 curves can be obtained for the device Cu/ZrO2/ATO which is measured at room temperature (300 K). During the RESET operation, 𝑅L and 𝑅H values can be controlled by the RESET voltage. Moreover, the Cu/ZrO2/ATO device which the ZrO2 thin film annealed at 300 °C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of 𝑅off/𝑅on reduced when the measured temperature decreased. When the 𝐼-𝑉 measurement temperature decreases, 𝑅on decreases obviously which is typical for electronic transportation in a Cu metal. It is indicated that the Cu metallic conduction filament has been formed in the ZrO2 films. Besides, the microstructure by high resolution transmission electrical microscopy (HRTEM) was also investigated.

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2023-2024 Indian Academy of Sciences, Bengaluru.