Articles written in Bulletin of Materials Science

    • Effect of annealing temperature on the microstructure and optoelectronic properties of niobium-doped anatase TiO$_2$ thin films grown on soda-lime glass substrate


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      In this work, we report on the growth of high-quality transparent conducting niobium-doped anatase TiO$_2$ (NTO) thin film on soda-lime glass substrate (SLG) by altering the annealing temperature. To this end, NTO films (with athickness of ${\sim}$131 nm) are deposited on SLG substrates at room temperature by radio frequency (RF) magnetron sputtering, following which these films are subjected to the post-deposition annealing at temperatures (T) in the range of 623 to 1023 K for 1 h at ${\sim}$2.2 9 10$^{–4}$ Pa. The crystallinity of these NTO films is considerably altered with T, which is found to effect significantly their overall optoelectronic properties. NTO film fabricated at T of 823 K exhibited the lowest electrical resistivity of 9.84 ${\times}$ 10$^{–3}$ ${\Omega}$ cm (with carrier concentration of 0.74 ${\times}$ 10$^{21}$ cm$^{–3}$ and carrier mobility of 0.85 cm$^2$ V$^{–1}$ s$^{–1}$) and an average visible transmittance of ${\sim}$76%. Apart from developing an understanding on the role of annealing temperature on the microstructural, optical and electrical properties of NTO films, this study also realized the growth of high-quality NTO film on the cost-effective SLG substrate.

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