Articles written in Bulletin of Materials Science
Volume 20 Issue 1 February 1997 pp 9-22
Interruption of growth and H-plasma exposure on stacking layers of Si:H film resulted in a remarkable change in material properties. Widening of optical gap and increase in dark conductivity were simultaneous with the reduction in photoconductivity, bonded hydrogen content and optical absorption. An associated change in the network structure from amorphous towards crystalline was observed. Enhanced dose of plasma exposure resulted in the gradual lowering in the size of nanograins and increase in their number density. Systematic widening in optical gap during dehydrogenation of the network appears to be a unique feature related to amorphous semiconductors, which suggests nanocrystallization and quantum size effect in hydrogenated binary alloy.
Volume 31 Issue 3 June 2008 pp 467-471
Growth and optimization of the nanocrystalline silicon (nc-Si : H) films have been studied by varying the electrical power applied to the helium diluted silane plasma in RF glow discharge. Wide optical gap and conducting intrinsic nanocrystalline silicon network of controlled crystalline volume fraction and oriented crystallographic lattice planes have been obtained at a reasonably high growth rate from helium diluted silane plasma, without using hydrogen. Improving crystallinity in the network comprising ∼ 10 nm Si-nanocrystallites and contributing optical gap widening, conductivity ascending and that obtained during simultaneous escalation of the deposition rate, promises significant technological impact.
Volume 43, 2020
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