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De-Yi Fu
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Volume 36 Issue 4 August 2013 pp 619-622
Investigation of localization effect in GaN-rich InGaN alloys and modified band-tail model
Chuan-Zhen Zhao Bin Liu De-Yi Fu Hui Chen Ming Li Xiang-Qian Xiu Zi-Li Xie Shu-Lin Gu You-Dou Zheng
The temperature-dependent PL properties of GaN-rich In𝑥Ga1−𝑥N alloys is investigated and 𝑆-shaped temperature dependence is observed in all InGaN samples. It is found that the origin of localization effect in samples A and B are different from that in sample C. For samples A and B, In content fluctuations should be the origin of localization effect, while the localization effect can be attributed to In-rich clusters and metallic indium inclusions for sample C. In addition, the band-tail model is modified and the modified band-tail model is used to investigate the degree of localization effect in the three samples.
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Bulletin of Materials Science
Volume 45, 2022
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
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