D N Bose
Articles written in Bulletin of Materials Science
Volume 1 Issue 2 October 1979 pp 121-128 Research Communications
A non-resonant microwave technique has been employed for the determination of saturation magnetisation (4
Volume 2 Issue 4 November 1980 pp 221-231 Articles
Silver halides are notable for exhibiting both ionic and electronic conductivity which is responsible for their widespread use in photography. Due to differences in ionicity and bonding, their properties vary from the highly ionic silver fluoride to the more covalent silver iodide. These fundamental properties such as defect formation energies, carrier mobilities and band-structures, particularly of silver iodide, have only recently been determined. One interesting finding is the presence of high surface fields, caused by differences between interstitial and vacancy formation energies, which results in separation of photo-generated electron hole pairs. This throws new light on the photographic process and on the suitability of silver bromide as a photographic material.
Volume 6 Issue 2 May 1984 pp 223-230 Glasses
The preparation, characterisation and applications of two systems of lithium ion conductors, lithium zinc germanate (Lisicon) and lithium germanate vanadate are described. Ionic conductivity studies include ac conductivity, thermopower and
Volume 10 Issue 4 July 1988 pp 349-351
Chemical modification of both
Volume 13 Issue 1-2 March 1990 pp 1-2 First National Seminar On GaAs And III–V Compound Semiconductors
Volume 13 Issue 1-2 March 1990 pp 75-82 First National Seminar On GaAs And III–V Compound Semiconductors
Photoluminescence (PL) studies on LPE-grown InP layers doped with selenium and having carrier concentrations from 1 × 1018 to 1 × 1020 cm−3 have been reported in this paper. Measurements at 300 and 77 K showed that the band to band recombination peak energy shifts to values as high as 1·7 eV with increasing doping, the increase being sharp beyond 4 × 1019 cm−3. These results have been explained as being the result of the Burstein shift and the band-gap shrinkage.
Volume 14 Issue 3 June 1991 pp 713-718 International Conference On Superconductivity—II
Studies of the effect of high power laser (Q-switched Ruby laser, 694 nm, 30 ns) irradiation on the critical current density (
Volume 17 Issue 6 November 1994 pp 1039-1047
GaTe is a III–VI semiconductor which has layered structure with large anisotropy in electrical properties. Growth of single crystals by the Bridgman technique permitted the measurement of thermoelectric power in orthogonal directions from which the anisotropy of hole effective masses were determined for the first time. From resistivity and Hall effect measurements the carrier activation energies and scattering mechanisms between 10–300°K were found.
Study of the temperature dependence of conductivity revealed a variety of conduction mechanisms including weak localization below 20°K, hopping conduction between 20–50 K and band conduction in and across the layer planes at
Volume 21 Issue 4 August 1998 pp 313-316 Surfaces Of Materials
Volume 22 Issue 6 October 1999 pp 947-951 Quantum Well Studies
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