Articles written in Bulletin of Materials Science

    • Interpretation of trap-assisted conduction with estimation of electrical parameters of thin indigo film-based semiconducting device


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      Trap-assisted charge conduction mechanism of indigo dye-based organic Schottky diode has been reported in present investigation. Signature of trapping probability has been encountered by G(I–V) vs. V characteristics. Nonmonotonous alignment of aforementioned characteristics emphasizes the existence of trapping states in its charge conduction process. Trap energy (E$_t$) has also been obtained for the device. Estimated value of E$_t$ is 0.073 eV which indicates improved outcome of 16.09 and 3.95%, when compared to other two previously reported organic dyes. Electrical parameters of the device have been estimated by analysing its $I–V$ relationship. Cheung–Cheung method has been used to calculate the series resistance (R$_s$), ideality factor ($n$) and barrier height ($\phi$) of the device. Obtained value of R$_s$, $n$ and $\phi$ are 0.127 k$\Omega$, 39.87 and 0.694 eV, respectively. Analysing the obtained data, Richardson–Schottky effect on charge transport mechanism has been interpreted in this context.

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