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D Champion Christdoss Selvakumar
Articles written in Bulletin of Materials Science
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Volume 10 Issue 3 May 1988 pp 181-185
Preparation and characterization of boric oxide for single crystal growth of GaP and GaAs
K Govinda Rajan N V Chandra Shekar M Sekar D Champion Christdoss Selvakumar
Boric oxide, used as an encapsulant, prevents loss of volatile components in the growth of compound semiconductors. As the material readily absorbs moisture, and as moisture content has to be kept below a certain level, preparation and handling of this material becomes an involved process. In the present paper we report the process developed for preparing boric oxide from boric acid and growth of cylindrical rods of the desired diameter. The grown boric oxide is characterized by thermal analysis. Infrared characterization is also a powerful method and the advantages of this technique as well as the problems faced in taking the IR spectrum are discussed.
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Bulletin of Materials Science
Volume 46, 2023
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Continuous Article Publishing mode
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Bulletin of Materials Science | News
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020 -
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Posted on July 25, 2019Click here for Editorial Note on CAP Mode
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