Articles written in Bulletin of Materials Science
Volume 13 Issue 1-2 March 1990 pp 135-150 First National Seminar On GaAs And III–V Compound Semiconductors
The motivations behind the development of GaAs integrated circuits (IC) are two-fold: to integrate high speed logic with optical sources and to meet the increasing demand of realising LSI/VLSI with higher speed and lower power dissipation for large scale computer applications. GaAs gigabit circuits have been growing in complexity to more than 3000 gates on a single chip. Although this is encouraging, more efforts are needed to improve production yield. By far the most work on GaAs digital IC has been done using MESFET as the active devices. MOSFET technology is yet to mature from the practical IC point of view. The logic gate types used in circuits are predominantly of the enhancement-mode driver and depletion-mode load configuration (E/D).
A brief survey of the state-of-the-art of GaAs digital IC is presented. Implemented circuits are described and compared with those achieved through various technologies. GaAs gate arrays, multipliers, accumulators and memories are discussed. At liquid N2-temperature, a switching time of 5·8 ps/gate has been achieved for 0·35
Volume 14 Issue 4 August 1991 pp 927-930 International Conference On Superconductivity—III
The magnetic response of YBa2Cu3O7−
Volume 42 | Issue 5
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