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DILBER ESRA YILDIZ
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Volume 44 All articles Published: 5 February 2021 Article ID 0025
Dielectric characterization of Al/PCBM:ZnO/$p$-Si structures for wide-range frequency
DILBER ESRA YILDIZ ADEM KOCYIGIT MEHMET OKAN ERDAL MURAT YILDIRIM
The dielectric properties of the Al/PCBM:ZnO/$p$-Si structure were investigated using the impedance spectroscopy technique. PCBM:ZnO layer was obtained by spin coating method on the $p$-Si. The morphological properties ofthe PCBM:ZnO were investigated using atomic force microscopy. The results highlighted that PCBM:ZnO thin film has uniform surfaces. The dielectric parameters such as real and imaginary parts of the electric modulus (M$^{\prime}$ and M$^{\prime\prime}$) and ac electrical conductivity ($\sigma$), dielectric constant ($\epsilon^{\prime}$), dielectric loss ($\epsilon^{\prime\prime}$), loss tangent ($\tan \delta$) values were determined. Theresults of the dielectric properties of the Al/PCBM:ZnO/$p$-Si structures impressed voltage and frequency changing. The Al/PCBM:ZnO/$p$-Si structures can be regarded as a candidate for organic diode applications.
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Bulletin of Materials Science
Volume 46, 2023
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Dr Shanti Swarup Bhatnagar for Science and Technology
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