High quality ceramic thin films were fabricated by thin film deposition process in semiconductor field in order to fabricate high performance carbon/SiO₂/Al₂O₃ membrane. 𝛼-Al₂O₃ substrate was used as a supporting material. A severe thermal stress and rough surface for active ceramic top layer such as zeolite were observed. To overcome thermal stress, intermediate layer of SiO₂ and diamond-like carbon (DLC) thin films were used. SiO₂ and DLC thin films on porous alumina support were deposited using plasma-enhanced chemical vapour deposition (PECVD). Homogeneous and smooth surfaces and interfaces of DLC/SiO₂/Al₂O₃ membrane were observed by FESEM. The phases of DLC and SiO₂ thin films were identified by X-ray diffraction pattern. Gas permeabilities of the nanofiltration membrane with DLC/SiO₂/Al₂O₃ were observed at various annealing temperatures. Mixed gas permeability of the membrane with 1 𝜇m-thick SiO₂ and 2 𝜇m-thick DLC thin filmannealed at 200 °C was ∼18 ccm at 1018 mb back pressure.