[Pb_0.95(La_1−𝑦Bi_𝑦)_0.05][Zr_0.53Ti_0.47]O₃ (PLBZT) ferroelectric thin films have been synthesized on indium tin oxide (ITO)-coated glass by sol–gel processing. PLBZT thin films were annealed at a relatively low temperature of 550 °C in oxygen ambient. Effects of Bi doping on structure, dielectric and ferroelectric properties of PLBZT were investigated. Bi doping is useful in crystallization of PLBZT films and promoting grain growth. When the Bi-doping content 𝑦 is not more than 0.4, an obvious improvement in dielectric properties and leakage current of PLBZT was confirmed. However, when the Bi-doping content is more than 0.6, the pyrochlore phase appears and the remnant polarization 𝑃_r of PLBZT thin films is smaller than that of (Pb_1−𝑥La_𝑥)(Zr_1−𝑦 Ti_𝑦)O₃ (PLZT) thin films without Bi doping. PLBZT thin films with excessive Bi-doping content are easier to fatigue than PLZT thin films.

Single-phase MnZnO₃ films were prepared on glass substrates coated with the use of indium tin oxide (ITO) as transparent bottom electrode via the sol–gel method. The effects of annealing temperature on structure, resistance switching behaviour and endurance characteristics of the ZnMnO₃ films were investigated. The stable resistive switching behaviour with high resistance ratio in Ag/ZnMnO₃/ITO unsymmetrical structure was observed. No second phase is detected, and the crystallinity of the MnZnO₃ films is improved with the increase in annealing temperature from 350 to 400°C. The MnZnO₃ films annealed at 350–450°C with an Ag/MnZnO₃/ITO structure exhibit bipolar resistive switching behaviour. Ohmic and space-charge-limited conductions are the dominant mechanisms at low and high resistance states, respectively. $V{}_{\text{ON}},\ \text{V_{OFF}}$ and $R_{\text{HRS}}/R_{\text{LRS}}$ of theMnZnO₃ films increase with the increase in annealing temperature. Improved endurance characteristics are observed in the samples annealed at 350 and 400°C. The endurance of the MnZnO₃ films degrades when annealed at >450°C.