C P G Vallabhan
Articles written in Bulletin of Materials Science
Volume 14 Issue 1 February 1991 pp 49-55
Thin film electroluminescent devices were fabricated with active layer of ZnS:Mn and different insulators viz Sm2O3, Eu2O3, Na3A1F6, MgF2, CeO2 and SiO in MIS and MISIM structure. The threshold voltage for light emission in AC thin film electroluminescent devices of MIS and MISIM structures is found to depend on the dielectric properties of insulating materials. The observed threshold voltage for these devices and its variations for devices with different insulators are explained using the equivalent circuit for the device and the dielectric properties of the insulting material used for the preparation of device. Variation of threshold voltage with operating time is also studied for some of the devices.
Volume 14 Issue 3 June 1991 pp 545-549 International Conference On Superconductivity—II
The spectroscopic analysis of the emission from the plasma produced by irradiating a high
Volume 15 Issue 2 April 1992 pp 183-188
Photothermal deflection technique was used for determining the laser damage threshold of polymer samples of teflon (PTFE) and nylon. The experiment was conducted using a Q-switched Nd-YAG laser operating at its fundamental wavelength (1-06μm, pulse width 10 nS FWHM) as irradiation source and a He-Ne laser as the probe beam, along with a position sensitive detector. The damage threshold values determined by photothermal deflection method were in good agreement with those determined by other methods.
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