• C H Bhosale

      Articles written in Bulletin of Materials Science

    • Electrochemical bath deposition technique: Deposition of CdS thin films

      S H Pawar C H Bhosale L P Deshmukh

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      Cadmium sulphide thin films have been deposited onto chromium plated stainless steel substrates under the influence of electric field. The various deposition parameters such as speed of rotation of the substrates, temperature of the chemical bath, molar concentrations of solution and the strength of the electric field were kept at optimized conditions. The electrochemical photovoltaic (ecpv) cells are formed with CdS film electrodes. The properties of CdS films andecpv cells are monitored with selective values of the electric field employed in the controlled precipitation technique. This relatively new technique is described and the possible film formation mechanism suggested.

    • Studies on K-Sb-S films deposited at different substrate temperatures and their photoelectrochemical behaviour

      C H Bhosale C D Lokhande S H Pawar

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      The electrical and optical properties of thin films of K-Sb-S prepared by spraying a solution of antimony potassium tartrate and thiourea onto heated conducting and non-conducting glass substrates are described. The polycrystalline films produced at an optimum spray rate and at different substrate temperatures were characterized for semiquantitative analysis. The films show variation in thickness with substrate temperature. Photoelectrochemical cells formed with the K-Sb-S film electrode, 0·5 M ferrocene in dimethylsulphoxide as the electrolyte and carbon as the counterelectrode were studied for their current voltage characteristics in dark and in light. Variation of short circuit current and open circuit voltage with light excitation intensity is also described.

    • Photoelectrochemical investigation on spray depositedn-CdIn2S4 thin films

      K Y Rajpure V L Mathe C H Bhosale

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      Polycrystalline thin films ofn-CdIn2S4 have been spray deposited onto amorphous and fluorinedoped tin oxide (FTO) coated glass substrates at the optimized substrate temperature of 380°C. The films were characterized by X-ray diffraction (XRD) and optical absorption studies. XRD studies revealed that the films were polycrystalline with spinel cubic structure. The optical absorption studies showed the band gap energy to be 2·14 eV. Photoelectrochemical (PEC) investigations were carried out using cell configurationn-CdIn2S4/1 M NaOH+1 M Na2S+1 M S/C. Using Butler model, the optical band gap and minority carrier diffusion length (LP) were found to be 2·22 eV and 0·07 µm, respectively. Gartner’s model was used to calculate the minority carrier diffusion length and the donor concentration (ND) for CdIn2S4 films at three different wavelengths.ND was found to be of the order of 1016 cm−3.

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