• C K Maiti

      Articles written in Bulletin of Materials Science

    • Metallo–organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications

      S Chatterjee S K Samanta H D Banerjee C K Maiti

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      ZrO2 films on silicon wafer were deposited by microwave plasma enhanced chemical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by fourier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to characterize the electrical properties of ZrO2 films. The films showed their suitability for microelectronic applications.

    • Electrical properties of Ta2O5 films deposited on ZnO

      S K Nandi S Chatterjee S K Samanta G K Dalapati P K Bose S Varma Shivprasad Patil C K Maiti

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      High dielectric constant (high-𝑘) Ta2O5 films have been deposited on ZnO/𝑝-Si substrate by microwave plasma at 150°C. Structure and composition of the ZnO/𝑝-Si films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) for chemical composition. The electrical properties of the Ta2O5/ZnO/𝑝-Si metal insulator semiconductor (MIS) structures were studied using high frequency capacitance–voltage (𝐶–𝑉), conductance–voltage (𝐺–𝑉) and current–voltage (𝐼–𝑉) characteristics. Charged trapping properties have been studied by measuring the gate voltage shift due to trapped charge generation under Fowler–Nordheim (𝐹–𝑁) constant current stressing.

    • Electrical characterization of low temperature deposited oxide films on ZnO/𝑛-Si substrate

      S K Nandi S Chatterjee S K Samanta P K Bose C K Maiti

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      Thin films of silicon dioxide are deposited on ZnO/𝑛-Si substrate at a low temperature using tetraethylorthosilicate (TEOS). The ZnO/𝑛-Si films have been characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The border trap density (𝑄bt) and fixed oxide charge density (𝑄f/𝑞) of the SiO2/ZnO/𝑛-Si films are found to be 3.9 × 1010 cm-2 and 1.048 × 1011 cm-2, respectively. The trapping characteristics and stress induced leakage current (SILC) have also been studied under Fowler–Nordheim (F–N) constant current stressing.

    • Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO2 as a gate dielectric

      S K Nandi S Chakraborty M K Bera C K Maiti

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      Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon substrates have been investigated. ZnO/Si substrates are characterized by Rutherford backscattering (RBS), X-ray diffraction (XRD), Fourier transform infrared (FTIR), and X-ray photoelectron spectroscopy (XPS). ZrO2 thin films have been deposited on ZnO using microwave plasma enhanced chemical vapour deposition at a low temperature (150°C). Using metal insulator semiconductor (MIS) capacitor structures, the reliability and the leakage current characteristics of ZrO2 films have been studied both at room and high temperatures. Schottky conduction mechanism is found to dominate the current conduction at a high temperature. Good electrical and reliability properties suggest the suitability of deposited ZrO2 thin films as an alternative as gate dielectric on ZnO/𝑛-Si heterostructure for future device applications.

    • Hybrid orientation technology and strain engineering for ultra-high speed MOSFETs

      T K Maiti C K Maiti

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      We report here RF MOSFET performance in sub-45-nm hybrid orientation CMOS technology. Based on the combination of hybrid orientation technology (HOT) and process-induced local strain engineering,MOSFET RF performance is investigated using CAD (TCAD) technology. Transistor optimization on (100) substrate via silicon nitride (Si3N4) cap layer thickness for 𝑛-MOSFETs, Ge mole fraction optimization for 𝑝-MOSFETs on (110) substrates and channel length scaling have resulted in record RF performance, viz. the cut-off frequency, 𝑓T.

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