B R Nag
Articles written in Bulletin of Materials Science
Volume 13 Issue 1-2 March 1990 pp 33-36 First National Seminar On GaAs And III–V Compound Semiconductors
Liquid phase epitaxial growth of lattice-matched In0·53Ga0·47As layers on InP substrates is investigated with particular emphasis on the role of interface defects on layer quality. By differential Hall measurements it is established that a bad interface, resulting from the thermal decomposition of InP substrate prior to growth, degrade the electron mobility in all parts of the layer and the effect is most pronounced at regions close to the interface. However layers with much better physical and electrical characteristics are grown following steps to ensure substrate surfaces free from any thermal damage.
Volume 13 Issue 1-2 March 1990 pp 57-63 First National Seminar On GaAs And III–V Compound Semiconductors
Monte Carlo results on the hot-electron transport coefficients of In(0·53) Ga (0·47) As are presented. The material parameters were selected by analysing the experimental hot-electron velocity-field characteristics and calculations were made by including all the relevant scattering mechanisms. Results are presented for the bulk drift velocity and diffusion coefficient and also for the velocity-field characteristics of submicron samples and 2 DEG.
Volume 45, 2022
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Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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