B M Arora
Articles written in Bulletin of Materials Science
Volume 13 Issue 1-2 March 1990 pp 11-26 First National Seminar On GaAs And III–V Compound Semiconductors
In this paper, we shall review important aspects of the growth of thin single crystal layers of binary, ternary and quaternary III–V compound semiconductors by liquid phase epitaxy (LPE). The emphasis will be on materials which can be grown lattice-matched to the common substrate materials GaAs, InP and GaSb. Usefulness and limitations of the LPE technique are highlighted.
Volume 21 Issue 2 April 1998 pp 127-131
We have successfully grown high mobility undoped and Te doped InSb crystals of size 10–12 mm dia. and 60 mm length under inert argon atmosphere in closed quartz ampoules, by vertical directional solidification (VDS) technique. The crystals showed predominantly (220) orientation along the growth axis. The surface defects, such as voids were reduced drastically by selecting proper lowering rate, rotational speed and cone angle of the ampoule. The high mobility and quality crystals were obtained with the ampoule conical angle less than 20°, lowering rate 5mm/h, and rotational speed 10 rpm.
Volume 42 Issue 1 February 2019 Article ID 0033
A high efficiency (>18%) industrial large area crystalline silicon wafer solar cell fabrication process generally requires industrial equipment with large footprint, high capital and running costs. Stricter processing window, continuousmonitoring and automated functioning are the reasons for it. However, for any conventional laboratory (lab) it is always difficult to manage these requirements with limited available lab space or insufficient fund and other related resources. In this work, we report a novel way to fabricate high efficiency full area aluminium back surface field monocrystalline silicon wafer solar cells in our lab using low-cost processing with small-footprint fabrication tools for 6 inch pseudo-square industrial wafers. The novelty of our work includes optimization of every fabrication process step, e.g., texturization, emitter diffusion, emitter passivation and anti-reflection coating deposition, edge-isolation, screen printing and co-firing individually. These modifications include tuning of processing tools and processes, utility changes and inclusion of additional process steps.Beaker-based chemical processes, manual diffusion furnace, introduction of low temperature oxidation, low temperature silicon nitride deposition processes, plasma-edge isolation tool, single manual screen printer, single oven drying of metal pastes and co-firing using rapid thermal processing tools were used at our lab. For our cells, actual and active area efficiencies of 18.5 and 19% (measured under AM1.5G 1 Sun condition), respectively, were achieved.
Volume 44, 2021
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
Click here for Editorial Note on CAP Mode