• BEHIYE BOYARBAY KANTAR

      Articles written in Bulletin of Materials Science

    • The effects of lithographic residues and humidity on graphene field effect devices

      BEHIYE BOYARBAY KANTAR MUH˙ITT˙IN ÖZTÜRK H˙IDAYET ÇET˙IN

      More Details Abstract Fulltext PDF

      Recently, unknown-manner changes in charge neutrality point (CNP) positioning were ascribed to humidity at graphene field effect transistors (GFETs). While the exactmeans of humidity interacting with hydrophobicgraphene remains unknown, this work examines pristine and lithographic-process-applied graphene surfaces with surface enhanced Raman spectra (SERS). SERS analysis shows that the lithographic-process-applied graphenedoes not have the same properties as those of pristine graphene. Furthermore, this study has experimentally investigated the effect of humidity on the transfer characteristics of GFET and proposed a model to explain the formationof asymmetric $I_{\rm DS}–V_{\rm bg}$ branches in accordance with the SERS results and humidity responses.

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.