The electrical properties of silver selenide thin films prepared by reactive evaporation have been studied. Samples show a polymorphic phase transition at a temperature of 403 ± 2 K. Hall effect study shows that it has a mobility of 2000 cm2V–1s–1 and carrier concentration of 1018 cm–3 at room temperature. The carriers are of 𝑛-type. X-ray diffraction study indicates that the as-prepared films are polycrystalline in nature. The lattice parameters were found to be 𝑎 = 4.353 Å, 𝑏 = 6.929 Å and 𝑐 = 7.805 Å.
