Anusaiya Kaswan
Articles written in Bulletin of Materials Science
Volume 39 Issue 1 February 2016 pp 255-262
Electrical conduction mechanism in GeSeSb chalcogenide glasses
Vandana Kumari Anusaiya Kaswan D Patidar Kananbala Sharma N S Saxena
Electrical conductivity of chalcogenide glassy system Ge$_{30−x}$Se$_{70}$Sb$_{x}$ (𝑥 = 10, 15, 20 and 25) prepared by melt quenching has been determined at different temperatures in bulk through the $I$–$V$ characteristic curves. It is quite evident from results that Poole–Frenkel conduction mechanisms hold good for conduction in these glasses in a given temperature range. The variation in electrical conductivity with composition was attributed to the Se–Sb bond concentration in the Se–Ge–Sb system. Results indicated that Ge$_5$Se$_{70}$Sb$_{25}$ showed the minimum resistance. In view of this the composition Ge$_5$Se$_{70}$Sb$_{25}$ may be coined as ‘critical composition’ in the proposed series. Also the activation energies of conduction of these glassy alloys have been calculated in higher and lower temperature range using the Arrhenius equation.
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