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Anindita Bose
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Volume 32 Issue 3 June 2009 pp 227-230
Metal–semiconductor nanojunctions and their rectification characteristics
Anindita Bose Kuntal Chatterjee Dipankar Chakravorty
Junctions of silver–copper oxide and silver–zinc oxide, respectively were prepared within the pores of diameters, 20 nm, in anodic aluminium oxide membranes. Voltage–current characteristics were measured over the temperature range 373–573 K which showed rectification behaviour. Using the standard equation the difference between the work functions of the metal and the semiconductor was calculated. This showed a variation with the temperature of measurement. This is explained as arising due to the effect of pressure generated as a result of thermal expansion of the metallic phases concerned between the electrodes. This is consistent with the theoretical prediction of Fermi level shifting of the semiconductor within the bandgap as a function of pressure.
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Bulletin of Materials Science
Volume 46, 2023
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
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