A P Bhat
Articles written in Bulletin of Materials Science
Volume 20 Issue 8 December 1997 pp 1069-1077
Implantations were carried out on gel-grown potassium dihydrogen orthophosphate (KDP) and those doped with magnesium oxide (MgO) single crystals using 100 MeV Ag+ heavy-ion beam of 15 UD 16 MV pelletron accelerator. To conduct a comparative study, measurements were carried out in the temperature range 243 K-403 K at frequencies ranging from 1 kHz-1 MHz on irradiated and nonirradiated nonlinear samples. It was observed that the mechanism of dielectric behaviour varied with frequency, temperature and ion irradiation. Further, implantation produced erratic variation in the conductivity both in the intrinsic and extrinsic regions, and also in the dielectric behaviour of the substance. The property of sensitive dependence on initial conditions, namely, chaos had set in after ion irradiation. However, the doping effect had not completely terminated the above transition, leading to chaos in the nonlinear medium.
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