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A J Singh
Articles written in Bulletin of Materials Science
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Volume 11 Issue 4 December 1988 pp 269-275
K Govinda Rajan N V Chandra Shekar G V N Rao A J Singh R M Iyer
Gallium phosphide is a typical III–V compound semiconductor and is also an important electronic material. The synthesis and single crystal growth of this compound by melt methods is rendered very difficult because of the large phosphorus vapour pressure. A high pressure vessel with internal heating and a quartz reactor was first developed for the direct synthesis of gallium phosphide. The crystal growth was carried out in a second high pressure chamber rated for 100 bars gas pressure and equipped with the paraphernalia for crystal growth. Single crystals of gallium phosphide were grown from the polycrystalline starting material by the vertical Bridgman method and the vapour pressure problem was overcome by encapsulating the melt in a column of molten boric oxide. Both boron nitride and silica were employed as crucibles, and with the former, single crystal rods of 8–10 mm diameter and 10–15 mm length were obtained.
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Volume 13 Issue 5 December 1990 pp 365-369
A laboratory design for uniaxial hot pressing
D S Mungekar K B Bhatt A J Singh
A design to hot press uniaxially compacts of 12 mm diameter and 15 mm long and its assembly has been described. The hot press was successfully employed to demonstrate conversion of BN powder into hexagonal machinable variety at 1800°C and 80 bars pressure.
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Bulletin of Materials Science
Volume 46, 2023
All articles
Continuous Article Publishing mode
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Bulletin of Materials Science | News
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020 -
Editorial Note on Continuous Article Publication
Posted on July 25, 2019Click here for Editorial Note on CAP Mode
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