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Volume 44 All articles Published: 25 March 2021 Article ID 0071
Thermal effects on resistive switching in manganite–silicon thin film device
AMIRAS DONGA K N RATHOD KEVAL GADANI DAVIT DHRUV V G SHRIMALI A D JOSHI K ASOKAN P S SOLANKI N A SHAH
In this article, we report the results of the fabrication and studies of Y$_{0.95}$Ca$_{0.05}$MnO$_3$/Si device (referred hereafter as YCMO/Si) by pulsed laser deposition (PLD) and its temperature-dependent resistive switching (RS) behaviours measured across the YCMO/Si interface. These temperature (100–300 K)-dependent hysteretic current–voltage ($I–V$) characteristics have been understood on the basis of various possible charge conduction mechanisms involving the thermal effects on the charge carriers during four different cycles of the RS behaviours. Variations in the values of barrierheight and the ratio of free to trapped charge carrier densities with temperature have been discussed for reverse bias mode of this YCMO/Si device. Temperature-dependent temperature coefficient of resistance (TCR) under different applied forward voltages shows an interesting variations in TCR with applied forward voltage, which proves this device as a potential candidate for practical applications.
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Bulletin of Materials Science
Volume 44, 2021
All articles
Continuous Article Publishing mode
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Bulletin of Materials Science | News
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020 -
Editorial Note on Continuous Article Publication
Posted on July 25, 2019Click here for Editorial Note on CAP Mode
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