• A DAS

Articles written in Bulletin of Materials Science

• History effects in low-field magnetoresistance of BPSSCO polycrystals

Low-field (H&lt;40 G) magnetoresistance measurements have been made on Bi1·6Pb0·4Sr2Ca2Cu3O10 polycrystals at several temperatures between 80 and 105 K. Considerable hysteresis in ρ(H) is found in a zero-field-cooled sample when the applied field is increased from 0 to a maximum value and then lowered back to 0 at all temperatures. The observation of hysteresis is taken as an evidence for field trapping in the grains. We show that the hysteresis in ρ(H) occurs for applied fields much lower than that at whichdρ(H)/dH exhibits a discontinuity. In addition, we find that when the applied magnetic field (Ha) is lowered from a maximum field, the effective intergranular field,Heff, becomes zero forHc&gt;0, which gives rise to a minimum in ρ(H).

• CuBO$_2$ nanonetwork: a novel and significant candidate for photocatalytic dye degradation

CuBO$_2$ is a novel material in the research field of transparent conducting oxide. In this study, CuBO$_2$ nanostructures have been synthesized via sol–gel method. The phase formation is confirmed using an X-ray diffractometer. Detailedmorphological analysis is performed by field emission scanning electron microscopy and transmission electron microscopy. Anovel uniform nanonetwork-like structure is obtained and its band gap is found to be 4.24 eV. In ultraviolet light irradiation, this as-synthesized sample shows efficient photocatalytic activity for degradation of organic dye Rhodamine B. The degradation efficiency and the rate constant were calculated as $\sim$70% and $1.32 \times 10^{−3}$ min$^{−1}$, respectively. This nanonetwork-like structure can be a potential candidate as the base material to attach various metals and metal oxide nanostructures to get highly efficient future photocatalysts. As a result, this study opens up a new gateway to fabricate novel environment-friendly nanocatalysts with high performance.

• Interpretation of trap-assisted conduction with estimation of electrical parameters of thin indigo film-based semiconducting device

Trap-assisted charge conduction mechanism of indigo dye-based organic Schottky diode has been reported in present investigation. Signature of trapping probability has been encountered by G(I–V) vs. V characteristics. Nonmonotonous alignment of aforementioned characteristics emphasizes the existence of trapping states in its charge conduction process. Trap energy (E$_t$) has also been obtained for the device. Estimated value of E$_t$ is 0.073 eV which indicates improved outcome of 16.09 and 3.95%, when compared to other two previously reported organic dyes. Electrical parameters of the device have been estimated by analysing its $I–V$ relationship. Cheung–Cheung method has been used to calculate the series resistance (R$_s$), ideality factor ($n$) and barrier height ($\phi$) of the device. Obtained value of R$_s$, $n$ and $\phi$ are 0.127 k$\Omega$, 39.87 and 0.694 eV, respectively. Analysing the obtained data, Richardson–Schottky effect on charge transport mechanism has been interpreted in this context.

• # Bulletin of Materials Science

Volume 45, 2022
All articles
Continuous Article Publishing mode

• # Dr Shanti Swarup Bhatnagar for Science and Technology

Posted on October 12, 2020

Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020