We report the results of the full-potential linearized augmented plane wave (FP-LAPW) calculations on the structural, elastic, optoelectronic and magnetic properties of CdHo$_2$S$_4$ spinel. Both the generalized gradient approximation (GGA) and Trans-Blaha modified Becke-Johnson potential (TB-mBJ) are used to model the exchange-correlation effects. The computed lattice parameter, internal coordinate and bulk modulus are in good agreement with the existing experimentaldata. According to the calculated elastic moduli, CdHo$_2$S$_4$ is mechanically stable with a ductile nature and a noticeableelastic anisotropy. The ferromagnetic phase of CdHo2S4 is energetically favourable compared to non-magnetic one, with ahigh magnetic moment of about 8.15 $\mu$B. The calculated band structure demonstrates that the title compound is a direct bandgap semiconductor. The TB-mBJ yields a band gap of $\sim$1.86 and $\sim$2.17 eV for the minority and majority spins, respectively.The calculated optical spectra reveal a strong response in the energy range between the visible light and the extreme UVregions.

Owing to the fact of the AB$_2$O$_4$ spinel oxide’s chemical and thermal stability, and other intriguing properties make them suitable candidate materials for many applications, including chemical looping and catalytic reactions. To do our investigations, a short-range non-Coulomb potential theoretical model is used to calculate the zone-centre, elastic constants, infrared phonon mode frequencies, Raman phonon mode frequencies, velocities of the sound wave along the highly symmetric three crystallographic-axes and Debye temperature of the vanadium spinel oxides AV$_2$O$_4$ (A $=$ Mn, Fe and Zn). The preliminary results of our calculations show that the interaction inthe second neighbour (V–O) is much stronger than the interaction of the first neighbour (A–O). Moreover, from the analysis of the obtained results of elastic constants, the nature of the studied vanadium spinels are found to beductile.

Spin-coating technique is employed to deposit nanostructured zinc oxide (ZnO) doping aluminium (Al) on p-Si substrate. Atomic forces microscopy (AFM), X-ray diffraction (XRD), ultraviolet–visible (UV–Vis) and scanning electron microscopies (SEM) are utilized to investigate the influence of annealing temperature in the range of 200 to 600$^{\circ}$C on the morphological, optical, structural and topographical characteristics of Al NPs-doped ZnO (AZO) nanostructure. The average reflectance is proven by the reflectance spectra to be in the wavelength range of 200–1000 nm, and the absorption spectra provided the optical energy gaps of nanostructured AZO. Crystalline and grain size are correlatedwith annealing temperature variations, thus providing more homogeneous and covered surface morphology. Our resultsare nominated for future researches.

In this study, an analysis of the effect of Na substitution on the electronic, structural and thermoelectric (TE) properties of the Li$_2$CuAs material is presented. The study is performed by employing the full-potential linearized augmented plane wave plus local orbital method designed within the density functional theory. To carry out the calculations related to the band structure, generalized gradient approximation by Wu-Cohen (WC-GGA) in combination with Trans Blaha-modified Becke-Johanson mBJ (TB-mBJ) potential is employed. Our results at the level of the WC-GGA approach show that there is no bandgap, whereas, at the level of the TB-mBJ approximation, the material displays bandgap with Na substitution, which is found to be further increased with the increasing Na concentration. To understand the role of different electronic states on the bandgap structure, the total and partial densities of states are also analysed. Furthermore, the temperature effect on the Seebeck coefficient, electronic thermal conductivity, electrical conductivity, power factor and figure of merit are computed. Our obtained results of the TE properties of Li$_2$CuAs at different Na compositions suggest that this compound is a potential candidate for thermoelectricity.