ANKUR JAIN
Articles written in Bulletin of Materials Science
Volume 29 Issue 1 February 2006 pp 67-72 Alloys
Structural, electrical and thermodynamical aspects of hydrogenated La–Ni–Si alloy
Ankur Jain R K Jain Shivani Agarwal I P Jain
The structural, electrical and thermodynamic properties of a La–Ni–Si [La = 28.9%, Ni = 67.5%, Si = 3.6%] alloy have been investigated. Powder XRD results show that the lattice constants and unit cell volume of the alloy increase after hydrogen storage. It was also found that the resistance of the alloy increased with dissolved hydrogen concentration. Hydrogen absorption pressure composition isotherms have also been investigated which show the presence of two single 𝛼 and 𝛽 regions and one mixed (𝛼 + 𝛽) phase. The thermodynamic parameters viz. the relative partial molar enthalpy (𝛥 𝐻) and relative partial molar entropy (𝛥 𝑆) of dissolved hydrogen, are found to be in the range 8–18 kJ (mol H)-1 and 25–63 JK-1 (mol H)-1. From the dependence of 𝛥 𝐻 on the hydrogen concentration, 𝑋, the different phases [𝛼, 𝛼+ 𝛽, 𝛽] and phase boundaries of the alloy-𝐻 system are identified. Thermal conductivity and diffusivity of La–Ni–Si and its hydride have been measured at room temperature by using TPS technique. Thermal conductivity was found to decrease due to absorbed hydrogen in the alloy.
Volume 29 Issue 2 April 2006 pp 187-191 Electrical Properties
Structural and electrical properties of swift heavy ion beam irradiated Co/Si interface
Garima Agarwal Ankur Jain Shivani Agarwal D Kabiraj I P Jain
Synthesis of swift heavy ion induced metal silicide is a new advancement in materials science research. We have investigated the mixing at Co/Si interface by swift heavy ion beam induced irradiation in the electronic stopping power regime. Irradiations were undertaken at room temperature using 120 MeV Au ions at the Co/Si interface for investigation of ion beam mixing at various doses: 8 × 1012, 5 × 1013 and 1 × 1014 cm-2. Formation of different phases of cobalt silicide is identified by the grazing incidence X-ray diffraction (GIXRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation. 𝐼–𝑉 characteristics at Co/Si interface were undertaken to understand the irradiation effect on conduction mechanism at the interface.
Volume 45 All articles Published: 17 October 2022 Article ID 0201
NISHA YADAV M D ANOOP JYOTI YADAV RINI SINGH NABARUN BERA SANDEEP RAVAJI PATEL ANKUR JAIN TAKAYUKI ICHIKAWA FOURAN SINGH KAMLENDRA AWASTHI MANOJ KUMAR
Invoking defects with ion implantation is an attractive means to modify the physical parameters of materials.
In the present work, Cu ions at fluence (1 ${\times}$ 10$^{15}$ ions cm$^{-2}$) with 100 keV energy were implanted on BiSbTe$_3$ (BST)
single crystals. The X-ray diffraction (XRD) measurements on pristine and Cu ion-implanted crystals demonstrate a
decrease in lattice parameter (
Volume 46, 2023
All articles
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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