• AMIRAS DONGA

      Articles written in Bulletin of Materials Science

    • Thermal effects on resistive switching in manganite–silicon thin film device

      AMIRAS DONGA K N RATHOD KEVAL GADANI DAVIT DHRUV V G SHRIMALI A D JOSHI K ASOKAN P S SOLANKI N A SHAH

      More Details Abstract Fulltext PDF

      In this article, we report the results of the fabrication and studies of Y$_{0.95}$Ca$_{0.05}$MnO$_3$/Si device (referred hereafter as YCMO/Si) by pulsed laser deposition (PLD) and its temperature-dependent resistive switching (RS) behaviours measured across the YCMO/Si interface. These temperature (100–300 K)-dependent hysteretic current–voltage ($I–V$) characteristics have been understood on the basis of various possible charge conduction mechanisms involving the thermal effects on the charge carriers during four different cycles of the RS behaviours. Variations in the values of barrierheight and the ratio of free to trapped charge carrier densities with temperature have been discussed for reverse bias mode of this YCMO/Si device. Temperature-dependent temperature coefficient of resistance (TCR) under different applied forward voltages shows an interesting variations in TCR with applied forward voltage, which proves this device as a potential candidate for practical applications.

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