• ADEL KALBOUSSI

      Articles written in Bulletin of Materials Science

    • Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-$k$ gate dielectrics investigated in the semi-classical and quantum mechanical models

      SLAH HLALI NEILA HIZEM ADEL KALBOUSSI

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      In this paper the electrical characteristics of metal–insulator–semiconductor (MIS) and metal–insulator–semiconductor–insulator–metal (MISIM) capacitors with (100)-oriented p-type silicon as a substrate under different high-$k$ gate dielectrics (SiO$_2$, HfO$_2$, La$_2$O$_3$ and TiO$_2$) are investigated in the semi-classical and quantum mechanical models. We review the quantum correction in the inversion layer charge density for p-doped structures. The purpose of this paper is to point out the differences between the semi-classical and quantum mechanical charge descriptions at the insulator–semiconductor interface and the effect of the type of oxide and their position (gate oxide or buried oxide) in our structures. In particular, capacitance–voltage ($C–V$), relative position of the sub-band energies and their wavefunctions are studied to examine qualitatively and quantitatively the electron states and charging mechanisms in our devices. We find that parameters such as threshold voltage and device trans-conductance are enormously sensitive to the proper treatment of quantization effects.

    • Structural and optical characteristics of silicon nanowires prepared by the Ag-assisted chemical etching method

      AHLEM ROUIS NEILA HIZEM MOHAMED HASSEN CHOHDI AMRI ADEL KALBOUSSI

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      In order to improve photovoltaic efficiency, researches have been carried out on silicon nanowires (SiNWs). In this article, we report a comparative study between silicon substrate (Si) and SiNWs developed by a metal-assisted chemical etching (Ag) method at different etching times (25, 10 and 5 min). Scanning electron microscopy (SEM), transmission electron microscopy and X-ray diffraction were used to collect the morphological and structural informationon the SiNWs. Raman spectroscopy shows that the intensity of the nanowires is 4 to 10 times higher than that of the substrate, and increases with increase in etching time. The total reflectance of SiNWs reduced to less than 5% over theentire visible range. The low reflectance and zero transmittance of SiNWs lead to higher absorbance in the visible wavelength range. The SiNW-etched nanowire structure (25 min) works best for capturing light, we believe that having longer nanowires improves the optical working of the nanostructures and may be a potential candidate for high efficiency photovoltaic solar cells and other optic devices.

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      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
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    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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