A F Qasrawi
Articles written in Bulletin of Materials Science
Volume 37 Issue 3 May 2014 pp 505-509
The room temperature, dark and photo-dielectric properties of the novel crystals TlGaSeS are investigated in the frequency, intensity and biasing voltage having ranges of ~ 1–120 MHz, 14–40 klux and 0–1 V, respectively. The crystals are observed to exhibit a dark high frequency effective dielectric constant value of ∼ 10.65 × 103 with a quality factor of ∼ 8.84 × 104 at ∼ 120 MHz. The dielectric spectra showed sharp resonance–antiresonance peaks in the frequency range of ∼ 25–250 kHz. When photoexcited, pronounced increase in the dielectric constant and in the quality factor values with increasing illumination intensity are observed. Signal amplification up to ∼ 33% with improved signal quality up to ∼ 29% is attainable via photoexcitation. On the other hand, the illuminated capacitance–voltage characteristics of the crystals reflected a downward shift in the voltage biasing and in the built-in voltage of the device that is associated with increase in the uncompensated carrier density. The increase in the dielectric constant with increasing illumination intensity is ascribed to the decrease in the crystal's resistance as a result of increased free carrier density. The light sensitivity of the crystals, the improved dielectric properties and the lower biasing voltage obtained via photoexcitation and the well-enhanced signal quality factor of the crystals make them promising candidates for optical communication systems.
Volume 38 Issue 3 June 2015 pp 593-598
In this study, a modified model for the application of the thermionic and hopping current conduction mechanisms in the presence of continuous mixed conduction is investigated, discussed, experimented and simulated. It is observed that there exists a contribution from the hopping conductivity to the total conduction even at temperature ranges where the thermionic emission is mainly dominant. The contribution weight of a specific mechanism at particular temperature range is estimated. In addition, a modification to the Mott’s variable range hopping (VRH) transport parameters like density of localized state near the Fermi level, the average hopping range and the hopping energy in the presence of mixed conduction mechanism is also reported. This new approach corrects the evaluated electrical parameters that are necessary for the construction of electronic devices like absorption layers in solar cells. This proposed model is also used to explain the conduction mechanism and investigate the electrical conduction thermionic and Mott’s VRH parameters in Tl4S3Se crystals and in CuAlO2 thin films.
Volume 43, 2020
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