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    • Volume 23 Issue 4 August 2000 pp 331-334 Electrical Properties

      Current-voltage studies on β-FeSi2/Si heterojunction

      A Datta S Kal S Basu

      More Details Abstract Fulltext PDF

      I-V characteristics of both β-FeSi2/n-Si and β-FeSi2/p-Si were studied at room temperature. The junctions were formed by depositing Fe on Si selectively followed by thermal annealing and some samples were later treated by pulsed laser. Temperature of thermal annealing and diode area were also varied.I-V studies on all these samples were done and ideality factors were computed. Results obtained were interpreted.

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