Articles written in Bulletin of Materials Science
Volume 30 Issue 6 December 2007 pp 561-565 Thin Films
Several different cleaning procedures for GaAs (100) substrates are compared using X-ray photoelectron spectroscopy and optical microscopy. This work emphasizes the effect of the last etching step: using either HCl, HF–ethanol (5%) or static deionized water after HCl cleaning. All the procedures except HCl solution (1 : 1) produce an As-rich surface. Also, none of the etchants except HF–ethanol solution produce Ga or As-rich (oxide free) surfaces. Optical microscopic study shows different etch pits produced due to etching in different solutions.
Volume 43, 2020
Continuous Article Publishing mode
Click here for Editorial Note on CAP Mode