pp 1-2 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Foreword

P Rama Rao D N Bose

pp 3-9 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Bulk growth of polycrystalline indium phosphide

J N Roy

pp 11-26 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Growth of III–V compounds by liquid phase epitaxy

B M Arora

pp 27-32 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Bulk growth of gallium antimonide crystals by Bridgman method

U N Roy S Basu

pp 33-36 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

An investigation of the growth of In_0·53Ga_0·47As layers on InP by liquid phase epitaxy

S Dhar Mala Mitra J B Roy B R Nag

pp 37-41 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

LPE growth of InGaAsP:InP high purity layers using rare earth elements

R K Sarin A T Gorelenok V I Korolkov

pp 43-49 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Electrodeposition kinetics of gallium arsenide

S Moorthy Babu L Durai R Dhanasekaran P Ramasamy

pp 51-56 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Ion implantation and laser treatment of III–V compound semiconductor: A brief report

S B Ogale

pp 57-63 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Hot electron transport in In (0·53) Ga (0·47) As

B R Nag

pp 65-74 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Some key properties of low-dimensional electron gas in semiconductors

P K Basu

pp 75-82 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Photoluminescence and heavy doping effects in InP

Seishu Bendapudi D N Bose

pp 83-88 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Characterization of defects in gallium arsenide

Vikram Kumar Y N Mohapatra

pp 89-94 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Characterisation of vacancy-like defects in III–V compound semiconductors using positron annihilation technique

A Sen Gupta

pp 95-98 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Multiple implantation of²⁹Si⁺ in semi-insulating GaAs and its characterisation

M B Dutt R Nath R Kumar Y P Khosla

pp 99-112 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

GaAs MESFET and related processes

O P Daga J K Singh B R Singh H S Kothari W S Khokle

pp 113-119 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Properties of gallium arsenide and indium phosphide impatts at microwave and millimetre-wave frequencies

S K Roy J P Banerjee

pp 121-133 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

High electron mobility transistors

S Subramanian

pp 135-150 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Gallium arsenide digital integrated circuits

D Bhattacharya

pp 151-159 March 1990 First National Seminar On GaAs And III–V Compound Semiconductors

Semiconductor lasers for optical communication

A K Srivastava