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    • InGaAsp-i-n photodiodes for fibre-optic communication

      D N Bose Arvind Kumar

      Emerging Optoelectronic Technologies Volume 17 Issue 3-4 September 1992 pp 385-389

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/sadh/017/03-04/0385-0389

    • Keywords

       

      Liquid phase epitaxy; photodiodes; InGaAs; fibre-optic detector

    • Abstract

       

      High purity layers of In1 −xGaxAs have been grown by liquid phase epitaxy using a novel impurity gettering technique with rare earth atoms. The electron concentration could thus be decreased from 3 × 1018 cm−3 to 2·4 × 1015 cm−3 and the mobility increased from 7 110 cm2/Vs to 18,981 cm2/Vs (100 K). The excellent quality of the layers has been evidenced by X-ray diffraction and photoluminescence measurements. The fabrication ofp-i-n photodiodes using this technique is described and reliability aspects addressed.

    • Author Affiliations

       

      D N Bose1 Arvind Kumar1

      1. Semiconductor Division, Materials Science Centre, Indian Institute of Technology, Kharagpur - 721 302, India

    • Dates

       
      Published
      September 1992

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