• InGaAsp-i-n photodiodes for fibre-optic communication

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    • Keywords


      Liquid phase epitaxy; photodiodes; InGaAs; fibre-optic detector

    • Abstract


      High purity layers of In1 −xGaxAs have been grown by liquid phase epitaxy using a novel impurity gettering technique with rare earth atoms. The electron concentration could thus be decreased from 3 × 1018 cm−3 to 2·4 × 1015 cm−3 and the mobility increased from 7 110 cm2/Vs to 18,981 cm2/Vs (100 K). The excellent quality of the layers has been evidenced by X-ray diffraction and photoluminescence measurements. The fabrication ofp-i-n photodiodes using this technique is described and reliability aspects addressed.

    • Author Affiliations


      D N Bose1 Arvind Kumar1

      1. Semiconductor Division, Materials Science Centre, Indian Institute of Technology, Kharagpur - 721 302, India
    • Dates

  • Sadhana | News

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