• Fulltext


        Click here to view fulltext PDF

      Permanent link:

    • Keywords


      AlX monolayer; strain; power factor; Seebeck coefficient.

    • Abstract


      Strain engineering is a practical and effective method to tune the optical and electronic properties of materials and to enhance their physical characteristics. Recent studies found that it provides a significant enhancement in the transport properties of materials based on chalcogenides such as transition metal dichalcogenide (TMD) monolayers. We investigate the effect of biaxial strain on the electronic structure and transport properties of AlS and AlSe monolayers using first principles calculations in the framework of density functional theory and Boltzmann transport theory. The electronic band structure shows that AlS and AlSe monolayers are indirect bandgap semiconductors and the band gap varies under the application of biaxial strain. The strain changes the relative positions and number of conduction bands as well as valence band extrema from its equilibrium and therefore tunes the electronic transport coefficients. Our calculations show that the application of biaxial strain increases the Seebeck coefficient as well as electrical conductivity which further enhances the power factor of n-type and p-type AlX (X = S or Se) monolayers.

    • Author Affiliations



      1. Department of Physics, Panjab University, Chandigarh 160 014, India
      2. Department of Chemistry, Govt. College, Una 174 303, India
      3. University Institute of Engineering and Technology, Panjab University, Chandigarh 160 014, India
      4. Present address: Department of Physics, King Abdulaziz University, Jeddah 21589, Kingdom of Saudi Arabia
    • Dates

  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2022-2023 Indian Academy of Sciences, Bengaluru.