• Fulltext


        Click here to view fulltext PDF

      Permanent link:

    • Keywords


      Charge carriers diffusion; triple wall potential; stochastic resonance.

    • Abstract


      We study the thermal dynamics of charge carriers jumping across potential traps in a one-dimensional semiconductor layer. The potential traps are denser at the middle layer and decay exponentially when moving away from it. Such a distribution drives the diffusion of the charge carriers toward the centre. Then, the application of a non-uniform temperature, hotter around the centre, gives a chance for some of the charge carriers to spread out. Exposing the system to an external bistable potential, more intense at the two ends of the semiconductor layer, forces the outward-moving charge carriers to condense around two localised positions. As a result, charge carriers are dense in the central region and in two symmetrically positioned regions away from the centre. Using numerical simulation, in the framework of three-state approximation, we investigate the mobility of charge carriersas a function of different controlling parameters. In the presence of two time-varying signals, we calculate explicitly the transition rates from the middle layer towards the edges of the semiconductor layer and vice versa. We alsostudy the stochastic resonance by monitoring the asymmetric mean position of the charge carrier distribution, that is triggered by the synchronisation of signals with the noise-driven transition.

    • Author Affiliations



      1. Department of Physics, CCNS, Wolkite University, P.O. Box 007, Wolkite, Ethiopia
      2. Department of Physics, Addis Ababa University, P.O. Box 1176, Addis Ababa, Ethiopia
      3. Dipartimento di Scienze Biomediche, Odontoiatriche e delle Immagini Morfologiche e Funzionali, Universita degli Studi di Messina, 98125 Messina, Italy
      4. CNR-IPCF, Viale F. Stagno d’Alcontres, 37-98158 Messina, Italy
      5. School of Chemistry and Physics, University of Kwazulu-Natal and National Institute of Theoretical Physics (NIThEP), Pietermaritzburg 3209, South Africa
    • Dates

  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2022-2023 Indian Academy of Sciences, Bengaluru.