• The effects of Co/Ni-vacancy complex defects on the electronic and transport properties of armchair silicene nanoribbon

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    • Keywords


      Armchair silicene nanoribbon; complex defect; transport property; first-principle.

    • Abstract


      In this paper, the geometric structures, band structures and transport properties of the armchair silicene nanoribbon with or without vacancy defect and Co/Ni-vacancy complex defects have been investigated by using first-principles calculations. The calculated results show that the atoms near the defect appear the restructuring, and it can be found that the introduced defect can modulate the electronic properties of armchair silicene nanoribbon. The defective sub-bands are good for the electronic transport of armchair silicene nanoribbon with Co-vacancycomplex defect but not good for armchair silicene nanoribbon with Ni-vacancy complex defect. Interestingly, the armchair silicene nanoribbon with Co-vacancy complex defect has negative differential conductance, which is in accordance with the total transmission of armchair silicene nanoribbon. It is suggested that the calculated results should be good for designing the electronic device based on armchair silicene nanoribbon.

    • Author Affiliations



      1. College of Science, Guilin University of Technology, Guilin 541008, China
      2. Energy Materials Computing Center, School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang 330013, China
    • Dates

  • Pramana – Journal of Physics | News

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